Intrinsic produces micropipe-free SiC substrates
Wide bandgap material and device manufacturer Intrinsic Semiconductor has produced SiC substrates free from micropipe defects, and has started production of initial lots of 100 mm (4-inch) substrates.
The US-based manufacturer announced both developments at the recent International Conference on Silicon Carbide and Related Materials (ICSCRM) in Pittsburgh, PA.
Intrinsic CEO Cengiz Balkas told delegates that the company has already produced 100mm wafers of both the 4H and 6H polytype, with micropipe densities as low as 1 cm-2 and 30 cm-2, respectively.
The conference attendees were also shown images of micropipe-free substrates measuring 3 inches in diameter.
"More than just a yield improvement, micropipe-free substrates introduce a new category of product, opening up new device possibilities," remarked Balkas.
According to the company, large-area devices that switch at least 100 amps cannot be manufactured cost-effectively even with substrates with micropipe defect densities of 1 cm-2.
"Zero micropipe material will thus be critical to commercial availability of next-generation high-power devices for electric utility controls, hybrid electric vehicles, and other power chip markets," said Balkas.
Intrinsic will be launching its first commercial 100 mm SiC substrates during the first half of 2006, and it is currently developing a "zero" micropipe version of this product.