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Dow Corning bags Navy cash for 100 mm SiC

Another company looks set to move into large-diameter SiC substrate production, thanks to more funding from the US military.

Chemicals company Dow Corning has won $3.6 million from the US Department of Defense - via the Office of Naval Research - that should lead to the development of 100mm-diameter device-quality SiC substrates.

Dow's compound semiconductor solutions division is aiming to integrate its SiC substrates operation in Auburn, Michigan, where it plans to develop crystal growth technology along with wafering and epitaxy skills.

The US Navy wants to use wide-bandgap electronic devices in applications such as advanced radar and next-generation power supply systems, while commercial applications are expected in hybrid electric vehicles and the electrical power grid.

Dow Corning is the latest of a number of companies to set its sights on 100 mm substrate development. In September, SiC specialist Cree launched commercial shipments of 100 mm n-type substrates, while IntrinSiC Semiconductor is planning to do the same in early 2006.

And another new supplier, the start-up company Caracal, is set to offer 100 mm substrates and epiwafers in both the 6H and 4H polytypes.

"With more than 60 years of silicon chemistry experience, Dow Corning has the power to advance the science of SiC technology beyond its current limitations," said Dow Corning chief scientist Mark Loboda.

"Our expertise and unique processes will allow us to organically develop crystal growth, wafering and epitaxy to meet long-term customer needs and expectations."

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