News Article

Anadigics Imitates BiCMOS With Latest GaAs Patents

RFIC manufacturer Anadigics has been granted five new patents, including three relating to the integration of bipolar and field-effect transistors.

Anadigics has significantly expanded its intellectual property portfolio with the award of five US patents for advanced RFIC designs.

Three of those patents relate to ICs that combine a bipolar structure with a field-effect transistor.

Anadigics has enjoyed success with its BiFET structures that feature on-die integration of bipolar and field-effect transistors, particularly in advanced cellular applications and the wireless LAN market through key chipset partners such as Intel and Qualcomm.

The five new patents should help the company to maintain that position as it concentrates on its high-end product offerings and WiMAX services begin to get a commercial roll-out.

They should also enable production of advanced devices with a smaller die size, in a similar fashion to the way that the silicon industry has combined the two types of structure in BiCMOS. "There has been no viable way to realize this concept in GaAs-based technologies for large volume commercial applications," said Anadigics in the most recently-awarded patent.

That patent, number 7,015,519, details how Anadigics makes the BiFETs that feature in its so-called InGaP-plus technology

The manufacturing method shows how to fabricate an integrated pair of GaAs-based HBTs and FETs on a semi-insulating GaAs substrate.

The first epitaxial layer features the FET structure. Next, a highly-doped, thick layer of GaAs is deposited. This second layer serves as the cap layer for the FET and the sub-collector layer for the HBT. The HBT is then fabricated via a second set of epitaxial layers.

Anadigics was also granted one patent describing a new method for improving the efficiency of ICs used in power amplifiers, and another disclosing a method to optimize an amplifier over a wide range of power levels.

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