Kyma Looks To Scale HVPE Approach
Currently producing 2 inch GaN substrates from a native seed, Kyma Technologies' crystal process will be scaled up to 4 inches by the end of the decade, report Keith Gurnett and Tom Adams.
GaN devices are enjoying great commercial success, but their performance is still held back by the foreign substrates that are generally used as a basis for their manufacture. Switching to high-quality GaN substrates would cure this problem, but making this form of substrate is not easy. Because of GaN s high melting point (~2500 °C) and the incredible chemical stability of nitrogen gas, conventional liquid approaches such as those used for silicon and GaAs, where an ingot is pulled directly from a crystal melt, have only brought limited success. The GaN crystals produced by this method do have an excellent crystalline quality, but they are far too small for manufacturing purposes.
AngelTech Live III: Join us on 12 April 2021!
AngelTech Live III will be broadcast on 12 April 2021, 10am BST, rebroadcast on 14 April (10am CTT) and 16 April (10am PST)
and will feature online
versions of the market-leading physical events: CS International
and PIC International
PLUS a brand new Silicon Semiconductor International
Thanks to the great diversity of the semiconductor industry, we are always chasing new markets and developing a range of exciting technologies.
2021 is no different. Over the last few months interest in deep-UV LEDs has rocketed, due to its capability to disinfect and sanitise areas and combat Covid-19. We shall consider a roadmap for this device, along with technologies for boosting its output.
We shall also look at microLEDs, a display with many wonderful attributes, identifying processes for handling the mass transfer of tiny emitters that hold the key to commercialisation of this technology.
We shall also discuss electrification of transportation, underpinned by wide bandgap power electronics and supported by blue lasers that are ideal for processing copper.
Additional areas we will cover include the development of GaN ICs, to improve the reach of power electronics; the great strides that have been made with gallium oxide; and a look at new materials, such as cubic GaN and AlScN.
Having attracted 1500 delegates over the last 2 online summits, the 3rd event promises to be even bigger and better – with 3 interactive sessions over 1 day and will once again prove to be a key event across the semiconductor and photonic integrated circuits calendar.
So make sure you sign up today and discover the latest cutting edge developments across the compound semiconductor and integrated photonics value chain.
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