BN Doping Heralds Transparent Solar Cells
A method that introduces silicon impurities as boron and nitrogen atoms are deposited could produce the most robust semiconductor devices yet.
Japanese researchers have invented a doping technique that could bring BN into use as a III-V wide-bandgap semiconductor, and used it to make a solar cell.
CS International to return to Brussels – bigger and better than ever!
The leading global compound semiconductor conference and exhibition will once again bring together key players from across the value chain for two-days of strategic technical sessions, dynamic talks and unrivalled networking opportunities.
Join us face-to-face between 28th – 29th June 2022
- View the agenda.
- 3 for the price of 1. Register your place and gain complementary access to TWO FURTHER industry leading conferences: PIC International and SSI International.
- Email email@example.com or call +44 (0)24 7671 8970 for more details.
*90% of exhibition space has gone - book your booth before it’s too late!