Argon Atmosphere Enhances Graphene-on-SiC
Innovative carbon monolayer production method avoids high-vacuum annealing and opens the subject up to a wider range of researchers.
German and US researchers have driven forward methods for producing graphene by annealing SiC substrates, producing the largest homogeneous epitaxial domains of the carbon material yet described.
CS International to return to Brussels – bigger and better than ever!
The leading global compound semiconductor conference and exhibition will once again bring together key players from across the value chain for two-days of strategic technical sessions, dynamic talks and unrivalled networking opportunities.
Join us face-to-face between 28th – 29th June 2022
- View the agenda.
- 3 for the price of 1. Register your place and gain complementary access to TWO FURTHER industry leading conferences: PIC International and SSI International.
- Email email@example.com or call +44 (0)24 7671 8970 for more details.
*90% of exhibition space has gone - book your booth before it’s too late!