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Deep SiGe Vias

Tower Semiconductor and its subsidiary, Jazz Semiconductor have announced the availability of Deep-Silicon-Via (DSV) technology available in its 0.18-micron SiGe BiCMOS
The new offering provides a way to create a lowinductance ground required to reduce power consumption of power amplifiers (PAs). Unlike older Through Wafer Vias used primarily with smaller wafer sizes in GaAs-based technology, the DSV is optimized for silicon 8-inch wafer.

The DSV technology developed by Jazz utilizes existing equipment in its silicon CMOS wafer fabs and therefore can be scaled efficiently to high volumes without requiring complex thin wafer handling and processing. According to Strategy Analytics, power amplifiers in front-end modules of cell phones are expected to grow from 1.6 Billion units in 2009 to 2.5 Billion units in 2012.

“We continue to invest in foundry technology for the front-end module by enabling silicon solutions of components that have traditionally been built in GaAs. This new DSV technology is the latest offering in our Silicon Radio Platform that includes SiGe power amplifiers and SOIbased silicon switch technology," said Dr. Marco Racanelli, Senior VP and GM, RF and High Performance Analog Business Group at Tower and Jazz.
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