News Article

Mitsubishi Electric Develops World’s First GaN HEMT Amplifier Exclusive To Satellite Applications

Mitsubishi Electric Corporation (TOKYO:6503) announced today it has developed four models of gallium nitride high-electron mobility transistor (GaN HEMT) for 4.0 GHz band satellite applications, with output ranging from 2W to 100W.

With these products, Mitsubishi Electric will become the first company in the world to market GaN HEMTs engineered exclusively for these particular applications. Sample shipments are scheduled to begin in March 2010.

 

Summary of Sale

 

Product   Model   Description

Internally impedance matched
high output power GaN HEMT

  MGFC50G3742S  

f=3.7 - 4.2 GHz (one of the three separated bands)

Output Power: 50 dBm (100 W), Efficiency: 60%

  MGFC46G3742S  

f=3.7 - 4.2 GHz (one of the three separated bands)

Output Power: 46 dBm (40 W), Efficiency: 60%

  MGFC43G3742S   f=3.7 - 4.2 GHz

Output Power: 43 dBm (20 W), Efficiency: 60%

Non internally impedance matched
high output power GaN HEMT

  MGF2633GS   f=4.0 GHz

Output Power:33 dBm (2 W), Efficiency: 50%

 

Aim of Sale

 

As more and more satellites are meeting the end of their operational lifespan, demand for new microwave communication satellites has recently been growing. While transmitter devices in these communication satellites have traditionally utilized gallium arsenide (GaAs) amplifiers, gallium nitride (GaN) HEMT amplifiers offer higher efficiency, as well as high-filed electron velocity and high breakdown fields. These characteristics help make transmitter devices smaller, lighter and more durable.

 

Product Features 1) GaN HEMT with high output power of up to 100 W (MGFC50G3742S)

 

To gain 100W output with GaAs amplifiers, it is necessary to combine an additional amplifier with an output of approximately 25 W in the final stage. Mitsubishi Electric’s new GaN HEMT amplifier, the MGFC50G3742S, achieves 100 W output with a single device, while retaining the same size as 25 W GaAs amplifiers, and offering a very high efficiency (power added efficiency) of 60%. Mitsubishi Electric has also developed GaN HEMT amplifiers with 40 W, 20 W and 2 W outputs, suitable for use in first- and mid-stage amplification. These lower output amplifiers are smaller, lighter and consume less energy.

 

2) High reliability for satellite applications

 

Designed for use in satellites, which are usually used for approximately 10 years, Mitsubishi Electric’s GaN HEMTs can operate for as long as one million hours given a chip temperature of 175 degrees C and an operation voltage of 45V, and are fit to operate in severe conditions found in space.

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