Microsemi Extends Advanced Silicon Carbide Portfolio With 1,500 Watt RF Power Transistor for UHF Pulsed Radar
Microsemi Corporation, a leading manufacturer of high performance analog mixed signal integrated circuits and high reliability semiconductors, announced today the introduction of a new 1,500 watt RF power transistor for UHF pulsed radar applications, expanding its industry-leading portfolio of high power silicon carbide transistors.
Designated the Model 0405SC-1500M, the new device from Microsemi's RF Integrated Solutions group, utilizes state-of-the-art SiC technology to provide unparalleled 1,500W peak power performance in a compact single-ended package that replaces complex push-pull balun circuitry found in conventional silicon BJT or LDMOS solutions.
"We are very excited to lead the market with this silicon carbide broadband transistor specifically designed for UHF Band pulsed radar in military and aerospace applications," said Charles Leader, Microsemi RFIS Vice President. "This new 1,500 watt device demonstrates our ability to extend this advanced technology through aggressive investment. We now can support next-generation UHF radar designs with a full series of silicon carbide transistors having powers rated at 100 watts, 500 watts, 1000 watts and now the 0405SC-1500M at 1,500 watts.
The 0405SC-1500M is a high performance, common gate, class AB, high power transistor designed for UHF frequencies from 406 to 450 MHz. It is built with 100% gold metallization and gold wires in a hermetically sealed package providing highest reliability for weather radar and over the horizon radar applications.
System Benefits with 0405SC-1500M SiC transistors:
* Single-ended simple impedance-matching design replaces complex push-pull balun circuitry
* Industry's highest peak power for reduced system power: 4-way combination yields 5kW with margin
* High operating voltage slashes power supply size and dc current demand
* Low conducting current minimizes system noise effect
* Extremely rugged performance improves system yields
* 50% smaller size than equivalent silicon devices
* All gold metallization and gold wire for military grade long term reliability
* Hermetic, solder-sealed packaging extends lifetime operation
The 0405SC-1500M transistor utilizes new chip design and processing enhancements to offer state-of-the-art performance, notably in high power, small transistor and circuit size over the specified frequency range with 300us pulse width and 6% duty cycle.
0405SC-1500M Key Product Features:
* Designed for 406 – 450 MHz UHF radar
* Medium Pulse Format: 300 us, 6%
* 1,500 watt output power
* High power gain: 8 dB Typ
* Drain efficiency: 45 % @450MHz
* Compression: In Compression
* Vdd: +125V
* Ruggedness capable of VSWR-T 5:1
Demo units for the entire line of Microsemi silicon carbide transistors are available now by contacting the factory or by email request to sic@microsemi.com. Technical datasheets are available on the Microsemi website at http://www.microsemi.com.
