Fraunhofer Institute orders AIXTRON MOCVD tool for GaN on SiC transistors
The IAF placed its order in the fourth quarter of 2009 and AIXTRON’s support team will install and commission the new reactor at their laboratory in the third quarter of 2010.
Dr. Klaus Koehler, Deputy Dept. Head of IAF's Epitaxy Group comments, “We have already made a good start on the development of GaN on SiC transistors on our existing AIXTRON reactors. However, we now need to significantly expand our capabilities. The new reactor will be used for the growth of AlGaN/GaN based HEMT (High Electron Mobility Transistor) structures on 4 inch semi-insulating SiC substrates. With this new system we will achieve the highest uniformity and crystal quality which is necessary for the fabrication of AlGaN/GaN based power amplifiers and MMICs.
The AIX 2800G4 HT will enable us to readily scale up to 11x4 inch wafers and to 6x6 inch at a future point. It has all the characteristics we need such as uniformity and efficiency in a production setting as required for GaN on SiC transistors for high power, high frequency commercial applications. In addition, it has the scope to provide us with a GaN on Si epiwafer capability should the application require that.”
Dr. Frank Schulte, Vice President of AIXTRON Europe adds, “The long-standing fruitful scientific cooperation with the IAF will have taken another key step when the AIX 2800G4 HT is delivered later this year. The system will enable them to further optimize the performance and process technology of these devices.”
For further information on AIXTRON AG please consult our website at: www.aixtron.com
