Silan orders 6 Aixtron CRIUS II reactors for UHB LEDs
Aixtron has received an order for six CRIUS II 55x2-inch configuration deposition systems from Hangzhou Silan Microelectronics or ‘Silan’. The Hangzhou, PR China based company, placed the order in the second quarter of 2010 and will take delivery of the systems over the fourth quarter 2010 to first quarter 2011 period.
The systems will be used for the volume production of GaN ultra-high brightness (UHB) blue/green LEDs. The local Aixtron support team will commission the new reactors at the company’s facility in Hangzhou, China.
Jiang Zhongyong, General Manager at Silan Azure, commented, “We are looking to carry out a major capacity increase for our nitride LED wafers so naturally we turned to Aixtron. Their new generation CRIUS II systems have demonstrated major improvements such as higher growth rates, high pressure growth and the more than doubling of productivity.”
He continued, “Therefore, I am convinced that the CRIUS II will meet our need for process flexibility, uniformity in thickness, doping, and composition. Our good relationship with the Aixtron Group and their very responsive local support will ensure that we receive the best service with the installation and operation of the advanced CRIUS technology.”
Silan is primarily engaged in the development, manufacture and sale of integrated circuits, LED products and other electronic components. Its main products include digital audio and video ICs, power management ICs, LED drivers, DC motor drivers, etc. The Company distributes its products principally in Zhejiang province, China. “
Aixtron's next generation CRIUS II Close Coupled Showerhead (CSS) system offers customers fastest time to production and minimized maintenance based on proven technology,” explained Tony Pearce, Managing Director at Aixtron. “The CRIUS II will be delivered with the ARGUS multi-channel pyrometer allowing real-time surface temperature measurement and analysis that enables to monitor the thermometric distribution across the whole of the MOCVD growth surface in the CCS system.”