News Article

Mitsubishi Reveals GaN HEMTs For L To C Band

The three High Electron Mobility Transistors (HEMTs) are for 0.5~6 GHz amplifiers which are incorporated into base stations for mobile phones.

Mitsubishi Electric has developed three modules of gallium nitride (GaN) HEMTs with 10W, 20W and 40W outputs. The three devices are for L to C band (0.5~6 GHz) amplifiers, which are incorporated into base stations for mobile phones, very small aperture terminals and other transmission equipment. Sample shipments of the 4.4 mm × 14.0 mm modules will begin from August 2010.

For microwave transmitters, gallium arsenide (GaAs) power amplifiers are most commonly used, but gallium nitride is now garnering more attention, owing to its high breakdown voltage and high saturated electron speed.

Mitsubishi Electric claims to be the first company in the world to manufacture GaN HEMTs in March 2010, launching four models for C-band space applications. HEMTs that use GaN have higher power density, which helps save energy and contributes to making transmitters more compact and lightweight, and expanded operating life.                            

 

Key features of the three devices are summarized below.

 

Product     Model           Output       Power          Quiescent          3dB Gain            LinearPowe

                                           Power        added              drain             Compression*              Gain                                                             efficiency        current*         [Power P3dB]               [Glp

                                                           (@P3dB,                                                                   (@ frequency

                                                          frequency =                                                               =2.6 GHz)]                                                                 2.6 GHz)





                                              

                 MGF0846G    46 dBm         46%                340mA                40W                           12dB

                                         (40 W)

  GaN       MGF0843G    43 dBm         48%                170mA                20W                           13dB

   HEMT                             (20 W)

                 MGF0840G    40 dBm         50%                  90mA                10W                           14dB

                                           (10 W)

             

* Drain to source voltage of 47V  

 

 
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