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Connector Optics To Design MBE Facilities In Russia For GaAs On Mass

The plant will be based in St. Petersburgh and be used to mass produce GaAs epitaxial structures used in high-speed active components, specifically VCSELs and photodetectors.

 Connector Optics has signed contracts to design industrial facilities to house MBE tools in Parnas industrial area in St.Petersburg, Russia. According to the contracts, A Plus Development also based in St.Petersburg, will be in charge of the project management, and SKTO Promproekt (Zelenograd) will be general designer. Some technology solutions will be provided by CRT Oy CleanRoom Tech (Tampere). The new facilities will house 400 square metres of clean rooms equipped with industrial molecular beam epitaxy (MBE) systems for mass production of epitaxial heterostructures based on gallium arsenide (GaAs). The heterostructures that will be grown will be used in high-speed (up to 40 Gbit/s) active optical components, namely, Vertical Cavity Surface Emitting Lasers (VCSELs) and photodetectors. These devices will be used in fiber optic communications of the next generation, namely, optical interconnects of supercomputers, data centers, HDMI and DisplayPort optic cables, and future USB cables. The launch of the plant is scheduled for the spring of 2011.

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