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SETI and Kyma join Forces to Develop High-Efficiency Deep UV LEDs

Grown on low defect AlGaN Substrates, the Joint Development Agreement is aimed at developing high performance optoelectronic and electronic devices.

Sensor Electronic Technology (SETI) has entered a Joint Development Agreement with Kyma Technologies, of Raleigh, NC, USA.
The collaboration is aimed at developing low defect AlGaN substrates and high performance optoelectronic and electronic devices based on these substrates.
Under the agreement, SETI will center its device development efforts on next generation high efficiency Deep UV LEDs on these novel substrates as it grows its markets in high power applications such as water disinfection.
SETI claims to be the world’s only commercial manufacturer of Deep UV LEDs and LED lamps. With a product portfolio from 240nm through 400nm SETI serves a wide range of markets including sensing and instrumentation. The firm has recently announced the development of high power single chip LEDs exceeding 30 mW and with high power lamps commercially available, SETI has recently been experiencing rapid growth in the disinfection/sterilization market.
“The LED performance improvements that will be enabled by developments under this Agreement will help us grow the foundation we have already built in the disinfection market” said President and CEO of SETI, Remis Gaska, “and will maintain our position as leaders in Deep UV LED products”.
Recently, SETI has successfully completed a Small Business Innovation Research (SBIR) Phase I program by the National Science Foundation to develop a prototype of a commercially viable all-LED based portable water disinfection system.
Kyma Technologies is a leading supplier of crystalline III-nitride semiconductor materials including GaN and AlN. Each semiconductor device layer stack has a preferred substrate composition. AlN and GaN substrates are preferred for device layer stacks which are AlN-rich and GaN-rich, respectively. For device layer stacks which have an intermediate preferred lattice constant, such as UV LEDs and certain next generation high frequency and high power electronics, AlGaN substrates are preferred.
“We appreciate the opportunity to work with SETI to develop a low defect AlGaN substrate product line, which should benefit a range of advanced nitride semiconductor device technologies,” stated Keith Evans, President and CEO of Kyma Technologies.
SETI and Kyma will both be presenting at the International Workshop on Nitride Semiconductors (IWN 2010) in Tampa, Florida on September 19th to 24th.

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