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RF Micro Devices to Showcase High Performance RF Components at electronica 2010

RF Micro Devices, Inc. a global leader in the design and manufacture of high-performance semiconductor components and compound semiconductor technologies, today announced it will showcase the Company's industry-leading high-performance RF components at electronica 2010, in Munich from November 9 to November 12, 2010.

RFMD continues to expand its portfolio of products and technologies for the wireless and wired broadband markets in support of broad end-market growth. RFMD's high performance RF components serve over 20 end-market segments, including point-to-point (P2P) microwave radio, high performance WiFi, WiMax, smart energy, wireless infrastructure, military and space, broadband transmission, and wireless consumer products. Of note, the high-performance products on display at electronica 2010 will include RFMD's breakthrough GaN-based products, such as the RF3932 -- a DC to 3GHz 78-Watt unmatched power transistor for high-power applications, and RFMD's recently announced RFPD2650 hybrid power doubler amplifier for CATV infrastructure applications. RFMD will also display its newly released RFSA2614 and RFSA2624 digital step attenuators, which address 3G/4G/LTE and WiMax markets, and the RF6535 -- a single-chip ZigBee front end module (FEM) that is optimized specifically for smart energy and advanced metering infrastructure (AMI) applications including smart meters. RFMD's product portfolio will be on display at the electronica 2010 November 9 to November 12, Stand #A4.136.

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