News Article
RFMD secures £3.2m R&D contract
RFMD has been awarded a new research and development contract worth £3.2 million from the US Department of Defense.
Compound semiconductor and high-performance radio frequency component manufacturer RF Micro Devices (RFMD) has been awarded a research and development contract from the US Department of Defense.
The company has secured a deal worth $3.2 million (£2.07 million), extending RFMD s contract backlog for the year to $5 million.
Development of new GaN microelectronics will be the focus of the project, with applications for the device including the disruption of communications, radar and use in electronic warfare.
Bob Bruggeworth, president and chief executive officer of RFMD, said: "RFMD s state-of-the-art GaN technology is also applicable to a growing number of commercial applications, such as public mobile radio, 3G/4G base stations, CATV line amplifiers, as well as exciting new applications in high-performance RF lighting."
Since 2007, the company has been awarded contracts worth approximately $13 million from the US government.
RFMD also recently announced the release of its first high-power radio frequency complementary metal-oxide-semiconductor switch, with applications for the technology in 3G and 4G communications for smartphones.
The company has secured a deal worth $3.2 million (£2.07 million), extending RFMD s contract backlog for the year to $5 million.
Development of new GaN microelectronics will be the focus of the project, with applications for the device including the disruption of communications, radar and use in electronic warfare.
Bob Bruggeworth, president and chief executive officer of RFMD, said: "RFMD s state-of-the-art GaN technology is also applicable to a growing number of commercial applications, such as public mobile radio, 3G/4G base stations, CATV line amplifiers, as well as exciting new applications in high-performance RF lighting."
Since 2007, the company has been awarded contracts worth approximately $13 million from the US government.
RFMD also recently announced the release of its first high-power radio frequency complementary metal-oxide-semiconductor switch, with applications for the technology in 3G and 4G communications for smartphones.
