News Article

Fairchild Acquires TranSiC

With this acquisition, Fairchild is branching out into SiC power device technology.

Answering the need for increasing efficiencies and higher performance for semiconductor applications, Fairchild Semiconductor is extending its technology capabilities with the acquisition of TranSiC, a SiC power transistor company.

The acquisition provides Fairchild with bipolar SiC transistor technology with demonstrated industry leading efficiencies and excellent performance over wide temperature ranges, and superior performance over MOSFET and JFET technology approaches. Fairchild also acquired a team of highly experienced SiC engineers and scientists and multiple patents in SiC technology.

“The combination of silicon carbide technology with Fairchild’s existing capabilities in MOSFETs, IGBTs and multi-chip modules, along with our global access to customers, positions us to continue to be a leader in innovative, high performance power transistor technology," said Mark Thompson, Fairchild’s Chairman, CEO and president.

“The performance levels achieved with SiC technology allow for much higher efficiency in power conversion. It also offers a higher switching speed, a feature that enables smaller end system form factors. Silicon Carbide technology is established in the market with a strong lead over alternatives in the wide bandgap area for applications that require voltages greater than 600V and demonstrates superior ruggedness and reliability," added Dan Kinzer, Fairchild’s Chief Technology Officer.

Benefits over alternative technologies include lower on-state voltage drop for a given chip size and higher current density. SiC devices also operate at higher temperatures and have extremely low thermal resistance. With ultrafast switching and only majority carrier conduction, SiC devices offer easy drive solutions due to normally off operation with current gain in the range of 100. Furthermore, they offer easy paralleling due to the positive temperature coefficient of resistance.

Additionally, the device resistance is very near the theoretical limit for SiC. Turn-on and turn-off times in the 25ns range switching 50A from 800V have been demonstrated. Parametric stability has been demonstrated under long term full rated bias and current stress conditions.

These high gain SiC bipolar devices are ideal for high-power conversion applications in down-hole drilling, solar inverters, wind-powered inverters, electric and hybrid electric vehicles, industrial drives, UPS and light rail traction applications. These markets are projected by Yole Development to approach $1 billion by 2020.

This device is capable of industry leading efficiency, cutting losses relative to established silicon approaches by up to half, or allowing an increase of frequency by up to 4 times with similar losses. Overall system cost and value can benefit from much smaller, lighter passive components. For systems that require the best efficiency and power density, there is no equal.

Fairchild is sampling initial 1200V products up to 50A ratings in targeted applications. Future offerings are in development to expand the voltage and current range, and to continue to drive improved energy saving.
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