News Article
M/A-COM marketing 0.5 to 4 GHz LNAs for microwave
The firm’s new series of gallium arsenide based MAAL-0107X LNAs deliver a high linearity performance and are also suited to RF applications including cellular infrastructure receivers.
A new family of Low Noise Amplifiers (LNAs) has been revealed by M/A-COM Tech. The LNAs facilitate easy implementation in multiple RF and microwave front-end circuits including GSM, CDMA, WCDMA and LTE base stations and repeaters.
The GaAs-based amplifiers meet the high performance requirements of telecommunications equipment manufacturers and are optimised for minimum system noise figures and increased receiver sensitivity.
“We are pleased to expand our cellular infrastructure product portfolio with the introduction of this family of low noise amplifiers. The low noise figure coupled with high gain and OIP3 make these LNAs ideal for first and second stage 3G and 4G receivers," said David Richardson, Market Director, of M/A-COM Tech Infrastructure Products.
The MAAL-010705 and MAAL-010706 are highly linear LNAs with a low noise figure, high gain and excellent input and output return loss designed for operation from 0.5 to 1.6GHz and 1.4 to 4.0 GHz respectively. These two amplifiers share the same pin out and are packaged in an RoHS compliant leadless 2 x 2mm DFN package. The bias current and gain can be set with external resistors allowing the user to customize the current consumption and gain value to fit the application.
The MAAL-010704 is a versatile broadband LNA which operates in the frequency range 0.1 to 3.5GHz and is packaged in SOT-363. Its bias current can also be set externally via the use of a resistor. The LNAs all feature an integrated active bias circuit allowing direct connection to 3V voltage supply while minimising variation over temperature and process.
Production quantities and samples of MAAL-010705 and MAAL-010706 are available from stock. The MAAL-010704 will be available for sampling and production in summer 2011.
