+44 (0)24 7671 8970
More publications     •     Advertise with us     •     Contact us
News Article

TriQuint’s GaN HEMT power transistor reduces costs

The new wideband gallium nitride HEMT delivers 18-W in defence / commercial applications to 6 GHz and can reduce costs through high efficiency, output and power gain.

TriQuint Semiconductor has released the T1G6001528-Q3 GaN packaged HEMT RF power transistor which operates over a wide bandwidth of DC to 6 GHz.

TriQuint says it is an excellent choice for defence and commercial wireless communications, avionics, radar systems, electronic warfare jammer amplifiers, test equipment and any application in which high power, broad frequency coverage, and high efficiency are critical.

Commercial and defence systems today place stringent demands on RF power devices. They must combine high RF output power with high-efficiency and gain across a wide bandwidth. The T1G6001528-Q3 is fabricated using TriQuint’s proven 0.25-μm GaN on SiC process that is optimised to meet these challenges.

It incorporates advanced field plate techniques that enhance RF output power and efficiency at high drain bias operating conditions. This has significant benefits for system designers because overall costs can be reduced as fewer RF power transistors and amplifiers are required to deliver a specific power level, which can decrease the system’s bill of materials and reduces thermal management requirements. 

“Nearly every application today requires RF power devices that are optimised for not just one, but all performance parameters,” said Richard Martin, TriQuint Defence & Aerospace Transistor Marketing Manager. “The T1G6001528-Q3 is an excellent example of how gallium nitride technology can be applied to meet these challenges without trading off a key performance metric just to satisfy another.”

“Compared to even robust technologies like GaAs, GaN provides superior wideband power, efficiency and gain. Our new packaged transistor delivers its 18 Watts output power with extremely high-efficiency, greater than 60% at 6 GHz, while providing the high gain and ruggedness today's applications require,” he continued.

The T1G6001528-Q3 operates from a 28 VDC power supply, will deliver its rated output power into a 10:1 VSWR without damage, and is housed in TriQuint’s compact, low-thermal resistance earless solder-down package.

T1G6001528-Q3 has a typical linear gain of 10 dB, and drain efficiency >60% at 6 GHz, maximum VSWR of 10:1, from 28 VDC supply.

Samples of the T1G6001528-Q3 and evaluation boards are available now.
Search the news archive

To close this popup you can press escape or click the close icon.
Register - Step 1

You may choose to subscribe to the Compound Semiconductor Magazine, the Compound Semiconductor Newsletter, or both. You may also request additional information if required, before submitting your application.

Please subscribe me to:


You chose the industry type of "Other"

Please enter the industry that you work in:
Please enter the industry that you work in: