RFMD’s new GaN wideband pulsed PA
Using an advanced high power density GaN semiconductor process, these high-performance amplifiers achieve high output power, high efficiency and flat gain over a broad frequency range in a single package. High terminal impedance enables wideband operation and minimizes overall PCB real estate. This matched GaN transistor is packaged in a hermetic, flanged ceramic package that provides excellent thermal stability through the use of advanced heat sink and power dissipation technologies. RF3928 With wideband operation of 2.8GHz to 3.4GHz, the module utilises advanced GaN HEMT and heat-sink technology. Its evaluation board layout is optimised for 50Ω operation and the device has a small signal gain of 12dB and a drain efficiency of 52%.