Technical Insight
Read Compound Semiconductor January/February 2012 Issue
Welcome to this month's digital edition of Compound Semiconductor.
Features in this issue include:
LED droop - Is it caused by defects or carrier asymmetry? MOCVD - Fulfilling the rising demand for highpurity hydrogen IEDM - Breakthroughs in silicon and GaN transistors Lasers - Ultra-fast pulses for biomedical applications Surveillance - Raising the operating temperature of infrared detectors Substrates - Increasing GaN throughput Down-sizing - New markets beckon for miniaturized LEDs Health and safety - Assessing the dangers of III-Vs
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