News Article
TriQuint unveils a versatile new 30 W GaN PA for telecoms
The company's new 2.5 - 6 GHz gallium nitride PA delivers 35% PAE for wide-ranging applications
TriQuint Semiconductor has released a new packaged, 30 W wideband GaN power amplifier with high power and efficiency for communications, defence and similar applications.
The device is released in conjunction with TriQuint’s exhibit at GOMACTech 2012, the US government-sponsored microcircuit and critical technology conference. The event is taking place between March 19th and 22nd in Las Vegas, Nevada.
The TGA2576-FL delivers 30 W of output power (45.5 dBm) across the 2.5 - 6 GHz frequency range. The new device is fabricated using TriQuint’s 0.25 µm, production-released GaN-on-SiC process and is available in a standard, surface-mount flange package.
The TGA2576-FL typically offers 35% PAE and 26 dBm of small signal gain.
TriQuint was recently honoured by the compound semiconductor industry with a ‘CS Industry Award’ for R&D excellence. The firm says the 2012 award spotlights TriQuint’s leadership in the DARPA-funded Microscale Power Conversion (MPC) program that supports development of high power / high frequency GaN DC-DC switch modulators for next-generation RF amplifiers.
TriQuint says its GaN portfolio offers the performance and dependability that defence, aerospace and commercial customers demand. The company provides design assistance and support built around enabling customers’ utilisation of new high-efficiency GaN circuits.
Interest in gallium nitride technology continues to grow as GaN transitions from defence applications that initially demonstrated its capabilities into mainstream commercial markets. The frequency range, power density, efficiency and device size of GaN devices are superior to other semiconductor technologies.
Samples and evaluation fixtures for the TGA2576-FL which are generally exportable, are now available.
