News Article

Record Breaking Output Power Achieved In GaN Ku-band PA

Mitsubishi Electric's latest gallium nitride power amplifier is expected to contribute to smaller and lighter transmitters for terrestrial stations used in satellite communications. What's more its output power is quadruple that of the firm's gallium arsenide amplifier and is a sixth of the size

Mitsubishi Electric has developed a prototype GaN HEMT amplifier, with it says, is currently the world-leading in Ku-band (14GHz) satellite communications, achieving 100W output power.                                         100W Ku-band GaN amplifier The high-output GaN HEMT amplifier features a downsized configuration and a low-loss circuit. Output power is double that of the company's existing GaN HEMT amplifier and quadruple that of Mitsubishi Electric's GaAs amplifier. The new amplifier's ability to perform the tasks of four conventional units represents an important contribution to downsize transmitters to one sixth the size of a GaAs amplifier. Vital satellite communications require robust systems that must work under adverse conditions, such as during natural disasters. High-power output is required for radio transmission from terrestrial stations to satellites in geostationary orbit 36,000 km above sea level. Also, terrestrial stations must be small enough to be transported by vehicles and installed. GaAs amplifiers have been used commonly for satellite communication transmitters, but GaN amplifiers have recently become increasingly popular because GaN transistors can handle very high voltages. Comparison of new and previous amplifier characteristics

Mitsubishi Electric began to ship samples of C-band 100W GaN HEMT power amplifiers for satellite communications in 2011.

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