Dow Corning Extends SiC Capacity With Aixtron
The firm is ordering more reactors to cope with growing demands for silicon carbide based products for the power electronics industry
Dow Corning has ordered an additional two Aixtron AIX 2800G4 WW planetary reactors for growth on 10 x 100 mm and 6 x 150 mm SiC wafers.
The reactors are scheduled to be commissioned in the second quarter of 2012.
“Extending our SiC epitaxy capabilities illustrates our commitment to helping our customers grow and succeed and our leadership’s commitment to the business," says Tom Zoes, Industry Director, Power Electronics business, Dow Corning Corporation.
“Dow Corning’s epitaxy technology on the Aixtron G4 deposition platform provides our customers with materials capability that enables the creation of high performance, next generation power electronics devices addressing the world’s growing demand for energy efficient solutions."
Frank Wischmeyer, Vice President and Managing Director of Aixtron AB, Sweden, adds, “We are pleased with the performance of the AIX 2800G4 WW system at Dow Corning. Repeat orders like this are indicators about the quality of our systems and their ability to provide a solid return on investment for our customers."