RFMD reveals single-stage InGaP HBT power amplifiers
US-based RF integrated circuit developer, RF Micro Devices, has unveiled the RFPA2089, a single-stage InGaP HBT power amplifier specifically designed for wireless infrastructure applications. The device offers high-gain linear operation at a comparably low DC power making it ideal for next generation radios requiring high efficiency. As RFMD highlights, its external matching allows for use across various radio platforms. Key features include 60dBc ACPR at 13dBm WCDMA and 0.25W OP1dB. The device promises excellent linearity-to-DC power ratio with a 17.6dB gain at 2.65GHz, single-supply 5V operation and class 2 (2000V) HBM ESD. According to RFMD, key applications include driver amplifier for base station transceivers, PA stage for commercial wireless infrastructure, IF amplifier and 2G, 3G, LTE transceiver applications.
