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Azzurro Semiconductors Chooses Veeco MOCVD for GaN-on-Silicon Epiwafer Production

Veeco announced today that Azzurro, involved in GaN-on-Si technology headquartered in Germany, has recently placed into production the TurboDisc® K465i™ gallium nitride Metal Organic Chemical Vapor Deposition System.

The MOCVD system is used to make gallium nitride on silicon wafers for power semiconductors, LED wafers and LED template wafers that enable customers to leverage the technology advantage of the GaN-on-Si technology themselves. 

Markus Sickmöller, Vice President Operations of Azzurro, commented, “Our technology provides high-quality, crack-free GaN layers on 150mm standard silicon wafers with very good crystal quality and extremely low bow values. We chose Veeco’s K465i to produce these high efficiency GaN-on-Si stacks because of its performance, process stability, and high throughput. We believe our GaN-on-Si technology will trigger a new wave of highly efficient and cost-optimized components for the LED and power semiconductor industry.” 

Jeff Hawthorne, Veeco’s Senior Vice President, MOCVD, commented, “The power electronics device market is forecasted by Yole Développement to be $25B by 2015, and GaN has the ability to make devices with higher efficiency and switching speed than traditional Si devices. Further, LEDs made with GaN-on-Si technology will enable lower LED costs. We anticipate that the demand for MOCVD tools for these GaN-on-Si applications will grow as technology moves from R&D into production. Veeco’s K465i systems offer key advantages for GaN-on-Si production, including low particle count and excellent yields, and we’re looking forward to continuing to support Azzurro’s growing GaN-on-Si business.” 

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