Rubicon Allowed Fabrication Patent
Latest US patent granted for in-situ crystal orientation
US-based sapphire substrate developer, Rubicon Technology, reveals the US Patent and Trademark Office has allowed its patent application entitled, “Intelligent Machines and Process for Production of Monocrystalline Products with Goniometer Continual Feedback."
The patent covers Rubicon’s equipment and process developed to perform in-situ orientation of its sapphire crystals within the various fabrication tools used by the company.
As the company explains, manufacturers have different requirements for the crystal planar orientation of the sapphire products used in various applications.
However, the new patented orientation technology provides greater precision in sapphire planar orientation and eliminates time-consuming steps by performing the orientation at the fabrication tool.
“Rubicon is known by many for its expertise in crystal growth technology, but our technological leadership extends from raw material through finished sapphire wafers," said Raja Parvez, president and chief executive of Rubicon Technology. “This patent reflects one of many technological innovations we’ve put in place to meet our customers’ exacting and evolving requirements."
AngelTech Live III: Join us on 12 April 2021!
AngelTech Live III will be broadcast on 12 April 2021, 10am BST, rebroadcast on 14 April (10am CTT) and 16 April (10am PST)
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Thanks to the great diversity of the semiconductor industry, we are always chasing new markets and developing a range of exciting technologies.
2021 is no different. Over the last few months interest in deep-UV LEDs has rocketed, due to its capability to disinfect and sanitise areas and combat Covid-19. We shall consider a roadmap for this device, along with technologies for boosting its output.
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Additional areas we will cover include the development of GaN ICs, to improve the reach of power electronics; the great strides that have been made with gallium oxide; and a look at new materials, such as cubic GaN and AlScN.
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