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Mitsubishi Electric's Ku-band GaN HEMT goes into orbit

The firm has developed a gallium nitride device for satellite earth stations, which it believes will reduce the number of high frequency amplifiers needed, by half
Mitsubishi Electric Corporation has developed a GaN high-electron mobility transistor (HEMT) Ku-band (12–18GHz) amplifier for satellite earth stations.

The MGFK47G3745 features an output power of 50W at 24V high-voltage operation, linear gain of 9dB and power added efficiency of 30 percent, 10 points greater than its predecessor, the MGFK44A4045.

Mitsubishi says it expects the device to reduce the number of high frequency amplifiers by half and contribute to greater power saving and downsizing for power transmitter equipment.


The module also has an output power meeting 3rd-order inter modulation (IM3) of -25dBc of 43dBm and is internally impedance-matched. The IDQ (Quiescent Drain Current ) is 1A and the frequency is 13.75 – 14.5 GHz (Ku band).

Simplified schematic of amplifier

In recent years, the use of GaAs amplifiers in microwave power transmitters has been increasingly replaced with GaN amplifiers due to their high breakdown-voltage, power density and saturated electron speeds.

Satellite-based communication, especially in the Ku-band, enables communication to be established under adverse conditions, such as during natural disasters, and in areas where communication facilities are hard to build. Mobile earth-based stations require in-vehicle portability and must be easy to install, so power-saving measures and downsized power transmitters are highly useful in helping to minimise the size of earth stations.

Mitsubishi Electric will begin shipping samples of the MGFK47G3745 on October 1st.

Moving forward, Mitsubishi Electric expects to expand its lineup of Ku-band satellite earth stations.


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