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Transphorm’s Yifeng Wu, Announced As Guest Speaker At CS International Conference, Frankfurt

CS International are pleased to announce Yifeng Wu, Vice President Product Development- Transphorm has been confirmed as a guest speaker for the Compound Semiconductor industry's premier international event, CS International, which will held in Frankfurt, Germany on 4th & 5th March 2013. His presentation will be on what is the Status of High-Voltage GaN Power Electronics.
Yifeng Wu received his Ph.D. degree from University of Santa Barbara in 1997 with a thesis in GaN power High-Electron-Mobility-Transistors (HEMTs). 

He served as a lead scientist in GaN microwave and millimeter-wave power devices at WideGap Technology LLC and Cree Inc. for 11 years.  He joined Transphorm in 2008 and is now Vice President of product development and applications.

Wu has been a pioneer in GaN Electron Devices since his Ph.D. studies in 1995. He was the first to demonstrate a GaN microwave power transistor [EDL 1996] and multiple times extended the record of the highest power density of a solid-state transistor [EDL 1998, IEDM 1999, EDL 2004, DRC 2006].

His contribution to GaN Electronics spans from basic device process development to cutting-edge device designs, from >30 GHz millimeter-wave power HEMTs to 600+ V high-efficiency power switches, from sub-dB low-noise amplifiers to multi-kW power converters.

He holds 40 patents and has authored many high-impact papers resulting in more than 3000 citations in Google Scholar.

Yifeng will join the two day event with speakers coming from a wide range of organisations including leaders from Intel Corporation, Aixtron, Epistar Corporation, RF Micro Devices (RFMD), TriQuint Semiconductor and over 30 other leading chipmakers giving their perspective on the latest developments in device technology.

Professionals from around the world will attend this two day event to hear key insights and opportunities, from a range of leading analysts, and learn of the latest chip developments in LEDs, solar cells, lasers and power and RF electronics.

Delegates will have the opportunity to network with leading industry professionals of the III-V chip making industry and interact with suppliers.

Further information is available on the CS International website at: www.cs-international.netor by calling 44 024 7671 8970.

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We shall also discuss electrification of transportation, underpinned by wide bandgap power electronics and supported by blue lasers that are ideal for processing copper.

Additional areas we will cover include the development of GaN ICs, to improve the reach of power electronics; the great strides that have been made with gallium oxide; and a look at new materials, such as cubic GaN and AlScN.

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