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BluGlass Drives Down Defects In GaN Films Grown By RPCVD

The independently verified impurity levels in gallium nitride grown by the Australian company are comparable to those grown in MOCVD grown layers
Sydney based BluGlass has announced it is now able to produce GaN with industry acceptable impurity levels using its low temperature Remote Plasma Chemical Vapour Deposition (RPCVD) technology.

BluGlass’ RPCVD grown GaN layers are now demonstrating reduced levels of impurities of carbon, hydrogen and oxygen. The company says they are now on par with the industry standard process, MOCVD, for its GaN layers.

The impurity levels were measured by Evans Analytical Group (EAG), an independent, global materials characterisation company, using Secondary Ion Mass Spectrometry (SIMS).

EAG has confirmed that BluGlass has demonstrated carbon, oxygen and hydrogen impurities at levels less than 1x1017 atoms cm-3.

This is a significant step forward that BluGlass believes will help enable the demonstration of industry equivalent electrical properties in RPCVD grown films to reach its proof of concept milestone.

The company is now seeking to optimise thep-GaN layer in order to show the advantages of RPCVD to customers. BluGlass aims to show improved LED device efficiency over the current industry standard MOCVD produced devices.

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