Info
Info
News Article

Fujitsu To Push GaN-on-Si Power Devices Forward

The Japanese firm is branching out into gallium nitride on silicon to serve servers
Fujitsu Semiconductor has successfully achieved an output power of 2.5kW in server power supply units equipped with GaN power devices built on a silicon substrate.



GaN power device prototype (TO247 package)

The firm intends to start volume production of GaN power devices in the second half of 2013.

These modules will enable the company to propose their use in a wide variety of value enhancing power supply applications, significantly contributing to the realisation of a low-carbon society.

Fujitsu Semiconductor is aiming to achieve approximately 10 billion yen in sales of GaN power devices in fiscal 2015.

Compared to conventional silicon-based power devices, GaN-based power devices have a lower on-resistance and the ability to perform high-frequency operations.

These characteristics are expected to contribute to improvements in the conversion efficiency of power supply units and make them more compact.

Fujitsu Semiconductor is aiming to commercialise GaN-on-Silicon power devices to reduce costs for customers. To achieve that, company has been developing technology for volume production since 2009.

What's more, Fujitsu Semiconductor has provided specific power supply-related partners with sample GaN power devices since 2011 and has worked on optimising them for use in power supply units.

Recently, in a collaborative effort together with Fujitsu Laboratories Limited, Fujitsu Semiconductor has been engaging in technical development initiatives. These include developing a process technology for growing high quality GaN crystals on a silicon substrate.

The two companies have also optimised the design of electrodes to control the rise of on-resistance during switching, and devising a circuit layout for power supply units that can support the high-speed switching of GaN-based devices.

These results have enabled Fujitsu Semiconductor, in a test circuit using a GaN power device, to increase conversion efficiency that exceeds the performance of conventional silicon devices.

The company views its success in these results as opening a path to high-voltage, large-current applications for its GaN power devices.

Fujitsu Semiconductor has recently completed setting up a mass-production line for 6-inch wafers at its Aizu-Wakamatsu plant, and will begin full-scale production of GaN power devices in the second half of 2013.



GaN power devices built on 6-inch silicon wafer

In the future, the firm aims to offer GaN power devices optimised for customer applications and technology support for circuit designs.



Efficiency comparison between Fujitsu Semiconductor's GaN power device and conventional silicon-based power device



Output of power supply unit for servers with Fujitsu Semiconductor's GaN power device



AngelTech Live III: Join us on 12 April 2021!

AngelTech Live III will be broadcast on 12 April 2021, 10am BST, rebroadcast on 14 April (10am CTT) and 16 April (10am PST) and will feature online versions of the market-leading physical events: CS International and PIC International PLUS a brand new Silicon Semiconductor International Track!

Thanks to the great diversity of the semiconductor industry, we are always chasing new markets and developing a range of exciting technologies.

2021 is no different. Over the last few months interest in deep-UV LEDs has rocketed, due to its capability to disinfect and sanitise areas and combat Covid-19. We shall consider a roadmap for this device, along with technologies for boosting its output.

We shall also look at microLEDs, a display with many wonderful attributes, identifying processes for handling the mass transfer of tiny emitters that hold the key to commercialisation of this technology.

We shall also discuss electrification of transportation, underpinned by wide bandgap power electronics and supported by blue lasers that are ideal for processing copper.

Additional areas we will cover include the development of GaN ICs, to improve the reach of power electronics; the great strides that have been made with gallium oxide; and a look at new materials, such as cubic GaN and AlScN.

Having attracted 1500 delegates over the last 2 online summits, the 3rd event promises to be even bigger and better – with 3 interactive sessions over 1 day and will once again prove to be a key event across the semiconductor and photonic integrated circuits calendar.

So make sure you sign up today and discover the latest cutting edge developments across the compound semiconductor and integrated photonics value chain.

REGISTER FOR FREE

VIEW SESSIONS

Info
×
Search the news archive

To close this popup you can press escape or click the close icon.
×
Logo
×
Register - Step 1

You may choose to subscribe to the Compound Semiconductor Magazine, the Compound Semiconductor Newsletter, or both. You may also request additional information if required, before submitting your application.


Please subscribe me to:

 

You chose the industry type of "Other"

Please enter the industry that you work in:
Please enter the industry that you work in:
 
X
Info
X
Info
{taasPodcastNotification}
Live Event