News Article
Fujitsu to push GaN-on-Si power devices forward
The Japanese firm is branching out into gallium nitride on silicon to serve servers
Fujitsu Semiconductor has successfully achieved an output power of 2.5kW in server power supply units equipped with GaN power devices built on a silicon substrate.
GaN power device prototype (TO247 package)
The firm intends to start volume production of GaN power devices in the second half of 2013.
These modules will enable the company to propose their use in a wide variety of value enhancing power supply applications, significantly contributing to the realisation of a low-carbon society.
Fujitsu Semiconductor is aiming to achieve approximately 10 billion yen in sales of GaN power devices in fiscal 2015.
Compared to conventional silicon-based power devices, GaN-based power devices have a lower on-resistance and the ability to perform high-frequency operations.
These characteristics are expected to contribute to improvements in the conversion efficiency of power supply units and make them more compact.
Fujitsu Semiconductor is aiming to commercialise GaN-on-Silicon power devices to reduce costs for customers. To achieve that, company has been developing technology for volume production since 2009.
What's more, Fujitsu Semiconductor has provided specific power supply-related partners with sample GaN power devices since 2011 and has worked on optimising them for use in power supply units.
Recently, in a collaborative effort together with Fujitsu Laboratories Limited, Fujitsu Semiconductor has been engaging in technical development initiatives. These include developing a process technology for growing high quality GaN crystals on a silicon substrate.
The two companies have also optimised the design of electrodes to control the rise of on-resistance during switching, and devising a circuit layout for power supply units that can support the high-speed switching of GaN-based devices.
These results have enabled Fujitsu Semiconductor, in a test circuit using a GaN power device, to increase conversion efficiency that exceeds the performance of conventional silicon devices.
The company views its success in these results as opening a path to high-voltage, large-current applications for its GaN power devices.
Fujitsu Semiconductor has recently completed setting up a mass-production line for 6-inch wafers at its Aizu-Wakamatsu plant, and will begin full-scale production of GaN power devices in the second half of 2013.
GaN power devices built on 6-inch silicon wafer
In the future, the firm aims to offer GaN power devices optimised for customer applications and technology support for circuit designs.
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Efficiency comparison between Fujitsu Semiconductor's GaN power device and conventional silicon-based power device
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Output of power supply unit for servers with Fujitsu Semiconductor's GaN power device
GaN power device prototype (TO247 package)
The firm intends to start volume production of GaN power devices in the second half of 2013.
These modules will enable the company to propose their use in a wide variety of value enhancing power supply applications, significantly contributing to the realisation of a low-carbon society.
Fujitsu Semiconductor is aiming to achieve approximately 10 billion yen in sales of GaN power devices in fiscal 2015.
Compared to conventional silicon-based power devices, GaN-based power devices have a lower on-resistance and the ability to perform high-frequency operations.
These characteristics are expected to contribute to improvements in the conversion efficiency of power supply units and make them more compact.
Fujitsu Semiconductor is aiming to commercialise GaN-on-Silicon power devices to reduce costs for customers. To achieve that, company has been developing technology for volume production since 2009.
What's more, Fujitsu Semiconductor has provided specific power supply-related partners with sample GaN power devices since 2011 and has worked on optimising them for use in power supply units.
Recently, in a collaborative effort together with Fujitsu Laboratories Limited, Fujitsu Semiconductor has been engaging in technical development initiatives. These include developing a process technology for growing high quality GaN crystals on a silicon substrate.
The two companies have also optimised the design of electrodes to control the rise of on-resistance during switching, and devising a circuit layout for power supply units that can support the high-speed switching of GaN-based devices.
These results have enabled Fujitsu Semiconductor, in a test circuit using a GaN power device, to increase conversion efficiency that exceeds the performance of conventional silicon devices.
The company views its success in these results as opening a path to high-voltage, large-current applications for its GaN power devices.
Fujitsu Semiconductor has recently completed setting up a mass-production line for 6-inch wafers at its Aizu-Wakamatsu plant, and will begin full-scale production of GaN power devices in the second half of 2013.
GaN power devices built on 6-inch silicon wafer
In the future, the firm aims to offer GaN power devices optimised for customer applications and technology support for circuit designs.
Efficiency comparison between Fujitsu Semiconductor's GaN power device and conventional silicon-based power device
Output of power supply unit for servers with Fujitsu Semiconductor's GaN power device
