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TriQuint's GaAs Amplifiers Are Oh So Quiet

The gallium arsenide based devices are suited for use as first-stage LNAs in base station receivers, tower-mounted amplifiers and repeaters
TriQuint Semiconductor has released two new dual matched low noise amplifiers that are ideally suited for balanced high performance RF design configurations.

These integrated LNAs are highly linear and offer very low noise figures, high output and include automatic shut-down capability for use in Time Division Duplex (TDD) and Frequency-Domain Duplex (FDD) applications. They are suited for use as first-stage LNAs in base station receivers, tower-mounted amplifiers and repeaters.


700-1000 MHz GaAs pHEMT low-noise amplifier: 0.5dB noise figure; 38.8dB OIP3; 21dBm P1dB RF output power; single positive supply (4.35V at 57mA).


1500-2300 GHz GaAs pHEMT low-noise amplifier: 0.62dB noise figure; 39.8dB OIP3, 21dBm P1dB RF output power; single positive supply (4.4V at 57mA). 

Both devices come in a dual-amplifier structure which enables balanced operation. They provide adjustable bias (drain current and voltage) and integrated bias shut-down capability for FDD and TDD operation. Both come in a 4 x 4mm QFN package.

 The TQP3M9039 and TQP3M9040 are in full production and samples are available.

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