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TriQuint introduces PA GaAs HBT module for mobile devices

The compact gallium arsenide power amplifier saves board space and enables high levels of integration
TriQuint has released a new quad-band GSM / EDGE power amplifier module with power-added-efficiency (PAE).

Included on a leading chipset supplier’s multi-mode reference design for linear EDGE applications, it is ideal for smartphones, tablets and other mobile devices.

The 5 x 3.5mm module is 30 percent smaller than previous generation products, saving board space and allowing for high levels of integration.

TriQuint says its GaAs HBT / CuFlip PA technology offers reliability, temperature stability and ruggedness.



TQM7M5050     

The 14-pin 5 x 3.5 x 0.9mm module is claimed to have excellent Rx band noise sensitivity. It also has an input power controlled GMSK and 8PSK (pre-distortion required in EDGE mode)

The low band and high band operation features two modes – BM and LBM. The PA output power is controlled by the input power coming from the transceiver in both GMSK and 8PSK modes.

The device's built-in CMOS controller is optimised for 50Ω operation.

The TQM7M5050 is in production, and samples are available from the firm's website.

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