News Article
Integra introduces 100MHz - 1GHz GaN HEMT
The gallium nitride module is suited to Broadband applications
Integra Technologies has launched the IGN0110UM100, a dual-lead packaged GaN high electron mobility transistor (HEMT).
This device is designed for Broadband applications operating over the 100MHz – 1GHz instantaneous frequency band.
Under CW conditions it supplies a minimum of 100 watts of output power with 12dB gain. Specified operation is with Class AB bias. It is also operable under a wide range of pulse widths and duty factors. It operates with spectral purity into all phases of 3:1 output load VSWR.
All devices are 100 percent screened for large signal RF parameters in a fixed tuned broadband matching circuit / test fixture. Integra says the use of external tuners is not permitted during screening.
This device is designed for Broadband applications operating over the 100MHz – 1GHz instantaneous frequency band.
Under CW conditions it supplies a minimum of 100 watts of output power with 12dB gain. Specified operation is with Class AB bias. It is also operable under a wide range of pulse widths and duty factors. It operates with spectral purity into all phases of 3:1 output load VSWR.
All devices are 100 percent screened for large signal RF parameters in a fixed tuned broadband matching circuit / test fixture. Integra says the use of external tuners is not permitted during screening.
