+44 (0)24 7671 8970
More publications     •     Advertise with us     •     Contact us
 
News Article

US DOE hails Soraa GaN on GaN LEDs

The firm has been recognised for the development of high-efficiency m-plane LEDs on bulk gallium nitride substrates
Soraa has received a Lighting award from the U.S. Department of Energy (DOE) for its outstanding work in the development of high-efficiency m-plane LEDs grown on low-defect density bulk GaN substrates.

The company demonstrated a very high peak internal quantum efficiency (IQE of 88 percent), low efficiency droop (10 percent from 10Acm-2 to 100A.cm-2) and perfect wavelength stability (up to 200A.com-2) at a wavelength of 450nm LEDs.

"Research and development of LEDs on bulk GaN substrates is one of the critical approaches to the technological development of Solid State Lighting - a sentiment recently echoed by the National Academy of Sciences. We are pleased to recognise Soraa's pioneering work in this area," says Jim Brodrick, Manager of the U.S. DOE's Solid State Lighting Program.

"We are honoured to receive an award from the U.S. Department of Energy and it is a further testament to deep technological expertise that has made us the world’s leader in the development of GaN on GaN LEDs on all planes,” adds Mike Krames, CTO of Soraa.

Soraa’s GaN on GaN LEDs handle more current and emit substantially more light (about ten times) per area of LED wafer material than the conventional approach of depositing GaN layers on cheaper foreign substrates like sapphire, SiC or silicon.

The company’s GaN on GaN technology leverages the advantages of the native substrate, including lower crystal defect densities (by more than a thousand times), which allow reliable operation at very high current densities, the same principle that enabled Blu-ray laser diodes.

In addition to improved crystal quality, the native substrate advantages of optical transparency and high electrical and thermal conductivity provide for a very robust, simple LED design for maximum performance. A further advantage of the GaN on GaN approach is the flexible choice of crystal growth plane, which has demonstrated advantages in high peak internal quantum efficiency and low-droop LED performance.

×
Search the news archive

To close this popup you can press escape or click the close icon.
×
Logo
×
Register - Step 1

You may choose to subscribe to the Compound Semiconductor Magazine, the Compound Semiconductor Newsletter, or both. You may also request additional information if required, before submitting your application.


Please subscribe me to:

 

You chose the industry type of "Other"

Please enter the industry that you work in:
Please enter the industry that you work in: