News Article

Hitachi Cable Launching GaN Template For LEDs

At CS Mantech 2013, Hitachi Cable will present its gallium nitride based templates grown on sapphire
Hitachi Cable has developed a new mass-production technology for GaN-templates as shown in  Figures 1 and 2 below.

The process allows high-quality GaN single-crystal thin film to be grown on a sapphire substrate and the company plans to start selling these templates.

Using this product as a base substrate for an epitaxial wafer for white LEDs the company claims it makes it possible to drastically improve productivity of white LED epiwafers and the LED properties.

Therefore, this product is expected to become an effective solution to improve the position of white LED manufacturers in the industry, where there is severe competition.

The demand for white LEDs is rapidly expanding and they have come to be used in backlight unit in liquid crystal displays (LCDs) and ordinary lighting devices in recent years thanks to their energy efficiency and long service life.

The structure of an white LED epiwafer consists of a thin active layer and a p-type GaN layer with a total thickness of about 1μm over an n-type GaN layer with a thickness of about 10μm, grown on a sapphire substrate as shown in Figure 3 below.

All these crystal layers are produced by the MOVPE processes. The MOVPE method is suitable for growing active layers which require atomic-level control of the film thickness.

Meanwhile, a disadvantage of this method is that it takes a long time to grow a high-quality and thick n-type GaN layer. White LED epiwafers can be grown about once or twice a day at the most, and thus there is a need for a high-efficiency production method.

To solve this problem, Hitachi Cable developed a GaN-template used as a base substrate for growth in the MOVPE method.

The GaN template consists of an n-type GaN layer grown on a sapphire substrate. Using a GaN-template means LED manufacturers do not need to grow an n-type GaN buffer layer and this reduces the time required for growth by about half compared with conventional methods.

Hitachi Cable says its GaN-templates are also suitable for high-output LEDs which require large currents because they allow both low resistance and high crystal formation.

The firm has developed single-crystal free-standing GaN substrates used for blue-violet lasers and developed unique HVPE-growth technology and machines for mass-production of GaN substrates.


Based on this technology, Hitachi Cable developed new high-efficiency production technology and machines for mass-production of high-quality GaN-templates.

The main characteristics of the GaN-template are as follows.

 High crystal quality and high surface quality based on growth technology established in the development of free-standing GaN substrates

Low resistance n-type GaN buffer which is suitable for high-output wafers and bonding-type LEDs

Templates on flat-surface sapphire substrates and various types of PSS are available

Wafers with 2 to 6 inches in diameters are available, with an 8-inch version now planned for developmen). Photos of the substrates currently avalable are shown below.


With this new GaN-template added to the lineup of GaN substrates and GaN epiwafers that it has been selling, Hitachi Cable aims to strengthen and expand its GaN product group and offer compound semiconductor products which respond to the various needs of clients.

Panel exhibits of GaN-templates will be presented at CS Mantech which will be held in New Orleans in the United States from May 13th to 16th.

AngelTech Live III: Join us on 12 April 2021!

AngelTech Live III will be broadcast on 12 April 2021, 10am BST, rebroadcast on 14 April (10am CTT) and 16 April (10am PST) and will feature online versions of the market-leading physical events: CS International and PIC International PLUS a brand new Silicon Semiconductor International Track!

Thanks to the great diversity of the semiconductor industry, we are always chasing new markets and developing a range of exciting technologies.

2021 is no different. Over the last few months interest in deep-UV LEDs has rocketed, due to its capability to disinfect and sanitise areas and combat Covid-19. We shall consider a roadmap for this device, along with technologies for boosting its output.

We shall also look at microLEDs, a display with many wonderful attributes, identifying processes for handling the mass transfer of tiny emitters that hold the key to commercialisation of this technology.

We shall also discuss electrification of transportation, underpinned by wide bandgap power electronics and supported by blue lasers that are ideal for processing copper.

Additional areas we will cover include the development of GaN ICs, to improve the reach of power electronics; the great strides that have been made with gallium oxide; and a look at new materials, such as cubic GaN and AlScN.

Having attracted 1500 delegates over the last 2 online summits, the 3rd event promises to be even bigger and better – with 3 interactive sessions over 1 day and will once again prove to be a key event across the semiconductor and photonic integrated circuits calendar.

So make sure you sign up today and discover the latest cutting edge developments across the compound semiconductor and integrated photonics value chain.



Search the news archive

To close this popup you can press escape or click the close icon.
Register - Step 1

You may choose to subscribe to the Compound Semiconductor Magazine, the Compound Semiconductor Newsletter, or both. You may also request additional information if required, before submitting your application.

Please subscribe me to:


You chose the industry type of "Other"

Please enter the industry that you work in:
Please enter the industry that you work in:
Live Event