News Article

CrystAl-N Launches 2-inch Bulk AlN

Highly transparent, 2-inch AlN promises to enhance the performance of RF devices and deep UV lasers and LEDs.
German AlN crystal maker CrystAl-N is shifting its production from 1-inch to 2-inch AlN and accepting pre-orders of the new material.

According to the company, which was founded in 2010 as spin-off of Friedrich-Alexander-University Erlangen-Nuremberg, AlN will boost the efficiency of deep UV LEDs, lasers and high-power, high-frequency devices as soon as its cost-performance ratio is competitive.  Shifting production to larger substrates will help to realize this. 

“After many years of R&D we finally managed to combine high uv transparency with suitable wafer size enabling a real commercial product," remarked company CTO Boris Epelbaum. “Further diameter increase in our patented tungsten based furnaces is not limited as we are using SiC as initial seed. “

Besides diameter enlargement wafer polishing drastically improved as well. “The corresponding wafers feature surface roughness of less than 0.3 nm and are highly UV transparent", says Octavian Filip, Director of Wafering.

AFM image (1 x 1 µm2) of a polished c-plane wafer. Ra surface roughness < 0.3 nm

low absorption coefficient values up to the band edge (peak at 2.8 eV - reason for yellowish coloration of bulk AlN grown by PVT)

AngelTech Live III: Join us on 12 April 2021!

AngelTech Live III will be broadcast on 12 April 2021, 10am BST, rebroadcast on 14 April (10am CTT) and 16 April (10am PST) and will feature online versions of the market-leading physical events: CS International and PIC International PLUS a brand new Silicon Semiconductor International Track!

Thanks to the great diversity of the semiconductor industry, we are always chasing new markets and developing a range of exciting technologies.

2021 is no different. Over the last few months interest in deep-UV LEDs has rocketed, due to its capability to disinfect and sanitise areas and combat Covid-19. We shall consider a roadmap for this device, along with technologies for boosting its output.

We shall also look at microLEDs, a display with many wonderful attributes, identifying processes for handling the mass transfer of tiny emitters that hold the key to commercialisation of this technology.

We shall also discuss electrification of transportation, underpinned by wide bandgap power electronics and supported by blue lasers that are ideal for processing copper.

Additional areas we will cover include the development of GaN ICs, to improve the reach of power electronics; the great strides that have been made with gallium oxide; and a look at new materials, such as cubic GaN and AlScN.

Having attracted 1500 delegates over the last 2 online summits, the 3rd event promises to be even bigger and better – with 3 interactive sessions over 1 day and will once again prove to be a key event across the semiconductor and photonic integrated circuits calendar.

So make sure you sign up today and discover the latest cutting edge developments across the compound semiconductor and integrated photonics value chain.



Search the news archive

To close this popup you can press escape or click the close icon.
Register - Step 1

You may choose to subscribe to the Compound Semiconductor Magazine, the Compound Semiconductor Newsletter, or both. You may also request additional information if required, before submitting your application.

Please subscribe me to:


You chose the industry type of "Other"

Please enter the industry that you work in:
Please enter the industry that you work in:
Live Event