News Article
IR commences shipments of GaN on Si devices
International Rectifier Corporation has qualified and shipped products built on its gallium nitride (GaN)- based power device technology platform for a home theatre system manufactured by a leading consumer electronics company
“Commencing commercial shipments based on our leading-edge GaN-based technology platform and IP portfolio extends IR’s leadership in power semiconductor devices and heralds a new era for power conversion, in line with our core mission to help our customers save energy,” states IR’s President and Chief Executive Officer, Oleg Khaykin.
“We fully anticipate the potential impact of GaN-based technology on the power conversion market to be at least as large as the introduction of the power HEXFET® by IR over 30 years ago.“
Vieming morphology of GaN on silicon wafer
IR says that this provides a capital-efficient manufacturing model that enables customers with improvements in key application-specific figures of merit (FOM) of up to a factor of ten compared to state-of-the-art silicon-based technology.
“GaN has the potential to be infused into every business unit and product line within IR over the long-term. We are excited about GaN, and see it as one of the major drivers for our long-term revenue growth, and market share expansion. I would like to thank all of the individuals involved and congratulate them for this tremendous accomplishment," Khaykin concludes.
The GaN-based power device technology platform is the result of ten years of research and development by IR based on the company's proprietary GaN-on-silicon epitaxial technology. The high throughput, 150mm GaN-on-Si epitaxy, together with subsequent device fabrication processes which are fully compatible with IR’s current cost effective silicon manufacturing facilities, offers customers a commercially viable manufacturing platform for GaN-based power devices.
“We fully anticipate the potential impact of GaN-based technology on the power conversion market to be at least as large as the introduction of the power HEXFET® by IR over 30 years ago.“
Vieming morphology of GaN on silicon wafer
IR says that this provides a capital-efficient manufacturing model that enables customers with improvements in key application-specific figures of merit (FOM) of up to a factor of ten compared to state-of-the-art silicon-based technology.
“GaN has the potential to be infused into every business unit and product line within IR over the long-term. We are excited about GaN, and see it as one of the major drivers for our long-term revenue growth, and market share expansion. I would like to thank all of the individuals involved and congratulate them for this tremendous accomplishment," Khaykin concludes.
The GaN-based power device technology platform is the result of ten years of research and development by IR based on the company's proprietary GaN-on-silicon epitaxial technology. The high throughput, 150mm GaN-on-Si epitaxy, together with subsequent device fabrication processes which are fully compatible with IR’s current cost effective silicon manufacturing facilities, offers customers a commercially viable manufacturing platform for GaN-based power devices.
