Info
Info
News Article

Cree Ships Over Two Million GaN HEMT Telecom Devices

The company says gallium nitride HEMT prices have greatly improved and are now a viable alternative to silicon LDMOS transistors for cellular telecom amplifiers
Cree says it has surpassed a significant milestone in shipping over two million GaN High Electron Mobility Transistors (HEMT) for cellular telecommunications.

The firm says it is providing game-changing benefits over traditional silicon-based technologies, including higher power, higher efficiency and wider bandwidth.

As mobile devices such as smartphones are becoming more widespread, telecommunications companies are looking for innovative technologies to improve channel capacity and speed of wireless systems, while simultaneously lowering power consumption of transmission amplifiers.

The use of GaN HEMT in transmitter amplifiers is gaining attention in the cellular telecommunications industry due to the ability to decrease power consumption and size, and increase bandwidth capabilities.

The world’s mobile networks are reported to consume about 120TWh of electricity per year (for an average cost of US$14.4 billion), and 50 percent of the networks power is consumed by power amplifiers and associated components. Consequently, improved power amplifier efficiency can result in considerable energy savings.

“Wireless telecommunication leaders are leveraging the performance advantages of Cree’s GaN HEMTs," says Tom Dekker, director sales and marketing, Cree RF Business Unit. “We are very pleased we achieved our two millionth GaN HEMT cellular telecom shipment milestone. GaN HEMT prices have greatly improved and are now a viable alternative to Si LDMOS transistors for cellular telecom amplifiers. We target continued growth of our telecommunication volumes."

The next-generation performance enabled by Cree GaN HEMT are required to support today’s 4G LTE cellular networks, as well as to help drive LTE release 10 and advanced LTE networks currently being developed.

The superior efficiency and bandwidth advantages of GaN HEMTs help LTE cellular network transmitters achieve smaller size, lower weight and improved thermal management compared with incumbent technologies.

GaN HEMT power amplifiers allow for data channel bandwidths over 100MHz and wide instantaneous RF bandwidths, helping operators aggregate multiple, non-adjacent frequencies to maximise the benefits of their licensed spectrum. Another significant advantage is improved transmitter efficiency, which offers tremendous energy savings for operating budgets.

Visitors to the IEEE International Symposium (IMS 2013), taking place between June 2nd and 7th can learn more about Cree's technology at Cree booth #2321.



AngelTech Live III: Join us on 12 April 2021!

AngelTech Live III will be broadcast on 12 April 2021, 10am BST, rebroadcast on 14 April (10am CTT) and 16 April (10am PST) and will feature online versions of the market-leading physical events: CS International and PIC International PLUS a brand new Silicon Semiconductor International Track!

Thanks to the great diversity of the semiconductor industry, we are always chasing new markets and developing a range of exciting technologies.

2021 is no different. Over the last few months interest in deep-UV LEDs has rocketed, due to its capability to disinfect and sanitise areas and combat Covid-19. We shall consider a roadmap for this device, along with technologies for boosting its output.

We shall also look at microLEDs, a display with many wonderful attributes, identifying processes for handling the mass transfer of tiny emitters that hold the key to commercialisation of this technology.

We shall also discuss electrification of transportation, underpinned by wide bandgap power electronics and supported by blue lasers that are ideal for processing copper.

Additional areas we will cover include the development of GaN ICs, to improve the reach of power electronics; the great strides that have been made with gallium oxide; and a look at new materials, such as cubic GaN and AlScN.

Having attracted 1500 delegates over the last 2 online summits, the 3rd event promises to be even bigger and better – with 3 interactive sessions over 1 day and will once again prove to be a key event across the semiconductor and photonic integrated circuits calendar.

So make sure you sign up today and discover the latest cutting edge developments across the compound semiconductor and integrated photonics value chain.

REGISTER FOR FREE

VIEW SESSIONS

Info
×
Search the news archive

To close this popup you can press escape or click the close icon.
×
Logo
×
Register - Step 1

You may choose to subscribe to the Compound Semiconductor Magazine, the Compound Semiconductor Newsletter, or both. You may also request additional information if required, before submitting your application.


Please subscribe me to:

 

You chose the industry type of "Other"

Please enter the industry that you work in:
Please enter the industry that you work in:
 
X
Info
X
Info
{taasPodcastNotification}
Live Event