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Integra Introduces New L-band GaN-on-SiC Chips

The company has expanded its gallium nitride on silicon carbide portfolio of devices for the L-band avionics market
Integra Technologies, Inc. (ITI), a manufacturer of high-power pulsed RF transistors, has revealed two GaN on SiC technology devices targeted for the L-band market.


Integra’s RF design team has launched two new products characterised in the L-band; the IGN1011M675 and the IGN1011M1200.


“With the release of these state-of-the-art GaN products, Integra demonstrates the commitment to provide high-power pulsed L-band RF transistors for the avionics market" says Fouad Boueri, Director of Operations. “We have years of RF expertise manufacturing high power semiconductors and providing on-time delivery and top quality. Outstanding customer support continues to be our goal."





IGN1011M675


Intended for commercial avionics applications including IFF Mode S applications, the PN IGN1011M675 operates over the instantaneous bandwidth covering 1030 MHz in the L-band frequency range. Characterised with a pulse train of 2.4ms with 6.4 percent LTDC, the IGN1011M675 typically supplies a minimum of 750 watts of peak output power. The single-ended device provides over 12dB of gain and 50 percent efficiency. The device is housed in a ceramic flanged package providing excellent thermal advantages over plastic packaged devices.





IGN1011M1200


The PN IGN1011M1200 operates over the instantaneous bandwidth covering 1030 MHz in the L-band frequency range. Intended for L-band avionics applications, that device is characterized under a pulse train of 2.4ms with 6.4 percent LTDC and supplies more than 1200W of output power while providing 12dB of gain and 50 percent efficiency. The single-ended device is housed in a ceramic flanged package providing excellent thermal advantages.


Samples and Availability


The IGN1011M675 and IGN1011M1200 are available for sampling in Q3 2013. For pricing and delivery please email sales@integratech.com




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