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Toshiba GaN HEMT Family Expands To Target C-Band RADAR

The gallium nitride 200W power amplifier offer high power, gain and efficiency to enhance weather RADAR performance
Toshiba America Electronic Components Inc. (TAEC) and its parent company, Toshiba Corp., have added a 200W C-Band GaN semiconductor High Electron Mobility Transistor (HEMT) to their power amplifier product family.

The new device will be shown during the conference exhibition portion of the 2013 IEEE MTT-S International Microwave Symposium between June 4th and 6th in Seattle, Washington at booth #2027.



Toshiba TGI5254-200P

The 200W TGI5254-200P is Toshiba's first commercial C-Band GaN HEMT that is optimised for pulse operation to support C-Band RADAR applications.

The new device operates in the 5.2 GHz1 to 5.4 GHz range. RF performance specifications include output power of 53.0dBm (typ.) with 43dBm input power, power gain of 10.0dB2 (typ.) and drain current of 2.4Amps2 (typ.) with pulse width of 200 µsec (nom.) and duty ratio of 10 percent (nom.). The device has a power efficiency of 40 percent and comes in a 7-AA06A package.               

This device enables increased output power and helps reduce size and weight in solid state power amplifiers (SSPA) for RADAR applications.

"Although this is our initial entry into this specific type of C-Band GaN HEMTs, Toshiba has long been a leading manufacturer of solid state power amplifiers for RADAR applications in the Japanese domestic and international markets," says Homayoun Ghani, business development manager, microwave devices, for TAEC's Discrete Business Unit. "Our GaN HEMTs have been one of the technological foundations helping to accelerate the modernisation of RADAR technology from a tube-based to a solid-state-based design. In fact, solid-state weather RADAR systems using Toshiba devices are currently in operation at several sites in Japan."

Samples of the Toshiba C-Band GaN HEMT will be available in Q3 of 2013.



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