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RFMD Reveals 500W GaN Amplifier For L-band

The gallium nitride device supports radar architectures requiring ruggedness and reliability
RF Micro Devices has unveiled a GaN matched power transistor (MPT) that the firm says will deliver industry-leading pulse power performance of 500W in a compact flanged package at L-Band.

RFMD's new amplifier, the RFHA1027, is optimised for pulsed power applications requiring efficiency and compactness.

It operates from 1.2GHz to 1.4GHz and provides 500W of pulsed RF power from a 50V supply. It also offers high gain of 16.5dB and high efficiency of 55 percent. The RFHA1027 is housed in a small form factor package of 24mm by 17.4mm, and is input and output matched to 50Ω, efficiently minimising external components.

What's more, the package leverages RFMD's advanced heat-sink and power-dissipation technologies to deliver excellent thermal stability and conductivity.

The RFHA1027 targets new and existing radar architectures requiring ruggedness and reliability. The introduction of RFHA1027 follows the previous release of RFHA1020 (280W L-Band) and RF3928 (280W S-Band).

"RFMD is pleased to introduce this new device with industry-leading power performance in support of diverse-end markets," says Jeff Shealy, vice president and general manager of RFMD's Power Broadband business unit.

"RFMD's GaN product portfolio clearly demonstrates our continued commitment to technology and product leadership, and we look forward to introducing additional GaN devices that feature superior power density, high efficiency, rugged dependability, and 'green' power consumption advantages," concludes Shealy.

Samples and production quantities are available now through RFMD's online store or through local RFMD sales channels.



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