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Cree SiC MOSFETs Halve The Component Count

Delta Elektronika demonstrated a 21 percent decrease in overall silicon carbide power-supply losses
Cree has announced that its newly expanded portfolio of 1200-V SiC MOSFETs are being incorporated into the latest advanced power supplies from Delta Elektronika BV.

Delta Elektronika demonstrated a 21 percent decrease in overall power-supply losses and a reduction in component count by up to 45 percent when compared to power-supply products using traditional silicon technology.

“We are delighted to use Cree’s new SiC transistor in our product series, as it improves both the efficiency and power density of our products," says Job Koopmann, director of Delta Elektronika BV. “The switching behaviour is outstanding, and controlling the MOSFET is simple and straightforward. This device is helping us to continue developing more-reliable products, which our customers expect from us."

Since 1959, Netherlands-based Delta Elektronika BV has been a leader in producing highly reliable, high-quality power supplies for a range of industrial applications, such as specialised equipment used in factories, automation and industrial power conversion.

Its power supplies typically provide high efficiency with low noise levels and are well known for their long operating lifespan. By implementing Cree’s advanced second-generation SiC MOSFETs in its latest power supply series, Delta Elektronika BV is leading the industry in the deployment and delivery of highly reliable advanced technology.

“We are pleased to have Delta Elektronika BV as one of the volume adopters of our newest generation of SiC MOSFETs," comments Cengiz Balkas, general manager, Cree Power and RF. “Delta Elektronika BV has a half-century legacy of producing some of the most-reliable, efficient and compact power supplies on the market. The industrial power-supply market, which values efficiency, reliability and power density, is a key market for SiC MOSFET technology. Our new, second-generation SiC MOSFET portfolio, which now includes a 160-mOhm MOSFET for the 5 to 10kW market, is receiving strong market pull."

Introduced in March 2013, Cree’s second-generation SiC MOSFETs have been well received throughout the power industry and are experiencing an increasing rate of adoption in several key applications, including a design-in in a major manufacturer’s next-generation, highly efficient PV inverters.

With SiC, power-supply manufacturers are able to reduce their component count to help improve reliability while maintaining or improving the power supply’s efficiency. Improving power density can also lead to reductions in the size, weight, volume and, in some cases, even the cost of power supplies. SiC has been demonstrated to achieve more than twice the power density of typical silicon technology in standard power-supply designs.

Packaged SiC MOSFETs from Cree are available from DigiKey, Farnell/Newark, Richardson and Mouser, and die are available from SemiDice.



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