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GaAs To Grow At CAGR 3.1 % Over The Period 2012-2016

The analysts forecast the Global Gallium and Arsenic (GaAs) Device market to grow at a CAGR of 3.1 percent over the period 2012-2016. One of the key factors contributing to this market growth is the increasing global adoption of smartphones. The Global GaAs Device market has also been witnessing an increasing number of collaborations among GaAs device manufacturers. However, increasing threat from alternate technologies could pose a challenge to the growth of this market.
The report, the Global GaAs Device Market 2012-2016, has been prepared based on an in-depth market analysis with inputs from industry experts. The report covers the market in the Americas, and the EMEA and APAC regions; it also covers the Global GaAs Device market landscape and its growth prospects in the coming years. The report also includes a discussion of the key vendors operating in this market.  

The key vendors dominating this space include Avago Technologies Ltd., RF Micro Devices Inc., Skyworks Solutions Inc., and TriQuint Semiconductor Inc.  

The other vendors mentioned in this report are Apple Inc., Advanced Wireless Semiconductor Company, Anadigics Inc., Samsung Electronics Co. Ltd., and WIN Semiconductors Corp. (GaAs).  

For more information please click on:  

http://www.researchandmarkets.com/publication/sml1wn/global_gaas_device_market_20122016   



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AngelTech Live III will be broadcast on 12 April 2021, 10am BST, rebroadcast on 14 April (10am CTT) and 16 April (10am PST) and will feature online versions of the market-leading physical events: CS International and PIC International PLUS a brand new Silicon Semiconductor International Track!

Thanks to the great diversity of the semiconductor industry, we are always chasing new markets and developing a range of exciting technologies.

2021 is no different. Over the last few months interest in deep-UV LEDs has rocketed, due to its capability to disinfect and sanitise areas and combat Covid-19. We shall consider a roadmap for this device, along with technologies for boosting its output.

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Additional areas we will cover include the development of GaN ICs, to improve the reach of power electronics; the great strides that have been made with gallium oxide; and a look at new materials, such as cubic GaN and AlScN.

Having attracted 1500 delegates over the last 2 online summits, the 3rd event promises to be even bigger and better – with 3 interactive sessions over 1 day and will once again prove to be a key event across the semiconductor and photonic integrated circuits calendar.

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