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New 650V normally-off GaN transistor family announced by GaN Systems

GaN Systems, a developer of gallium nitride power switching semiconductors, has announced five new normally-off 650V GaN transistors optimised for high speed system design.

The GS66502P, GS66504P, GS66506P and GS66508P are respectively 8.5A/165mΩ, 17A/82mΩ, 25A/55mΩ and 34A/41mΩ parts, while the GS43106L is a 30A/60mΩ cascode.

The new 650V enhancement mode parts feature a reverse current capability, zero reverse recovery charge and source-sense for optimal high speed design. RoHS compliant, the devices are delivered in GaN Systems’ near chipscale, embedded GaNPXpackage which eliminates wire bonds thereby minimising inductance. This package also optimises thermal performance and is extremely compact.

Girvan Patterson, President of GaN Systems comments:"With these new 650V parts as well as our recently-announced 100V family, GaN Systems offers a very wide range of parts which are available for are sampling now. Applications include high speed DC-DC converters, resonant converters, AC motor drives, inverters, battery chargersand switched mode power supplies.”




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