Plessey demonstrates large GaN-on-Si LED capability
20 square mm GaN-on-Si LED die generates up to 5W of blue light
Plessey today announced its capability to make large, high-performance, high-volume GaN-on-Si LED die. It has produced a 20 square mm die design that will generate up to 5W of blue light over a 400-480nm wavelength range, as a technology demonstrator.
According to Plessey, this large die benefits from three features of the Plessey process; low thermal resistance of silicon; a single-surface, emitter die design; and 6-inch wafer processing.
Large area LED die help customers in many ways, particularly for Chip-on-Board (CoB) products in providing a much simpler, more uniform light emitter whilst reducing die attach and wire bond overheads. The low thermal resistance of the silicon substrate makes for easier thermal management and enhanced reliability resulting from lower temperature operation.
The die uses Plessey's vertical design structure that has a cathode top and anode bottom contacts, which is ideal for scaling the effectiveness in applying large die. And, with 6-inch wafer processing coupled with best-in-class across wafer uniformity, Plessey makes such large die a real commercial proposition.
David Owen, Plessey's marketing director, explains: "It is clear that the next wave of general lighting products will see LEDs applied in ways that truly exploit the benefits obtained through Plessey's leading GaN-on-Si technology. This announcement marks the start of a phase where we engage with our key partner customers in defining the commercial realisation of lighting products based on Plessey's large GaN-on-Silicon LED die."
