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EPC's GaN Transistors awarded for innovation

Electronic Products Magazine awards single-chip half-bridge GaN chip for technology advancement in discrete semiconductors.

EPC's enhancement-mode GaN on silicon (eGaN) monolithic half-bridge power transistor products have received a Product of the Year award from the trade magazine Electronic Products.

The editors of Electronic Products evaluated thousands of products launched in 2014. The winning products were selected on the basis of innovative design, significant advancement in technology or application, and substantial achievement in price and performance. The eGaN half bridges demonstrated success in the category of discrete semiconductors by being the first commercially available enhancement-mode single chip transistor half bridge.

"The EPC2100 family of half-bridge products represent a significant step in the emergence of GaN semiconductor technology," said Paul O'Shea, senior editor for Electronic Products Magazine. "By integrating two eGaN power FETs into a single device, interconnect inductances and the interstitial space needed on the PCB are eliminated. This increases both efficiency (especially at higher frequencies) and power density, while reducing assembly costs to the end user's power conversion system."

"We are very proud that the editors of Electronic Products have selected the EPC2100 eGaN half-bridge products for this prestigious award. This award substantiates that gallium nitride technology continues to emerge as the performance leader in power conversion technology. We believe that silicon-based MOSFETs have reached the end of the road, and that eGaN technology will lead the way for continued increases in performance in power management," said Alex Lidow, EPC's co-founder and CEO.

 

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