Loading...
News Article

Plextek RFI to present on X-Band PA design

Webinar to address challenges of design using SMT plastic packaged GaN transistors

Liam Devlin, CEO of Plextek RFI, a UK based design house specialising in the design and development of RFICs, MMICs and microwave/mmwave modules, will be presenting a webinar entitled 'Designing X-Band PAs Using SMT Plastic Packaged GaN Transistors' on 3 December 2015. The webinar, which will take place at at 18:00 GMT is sponsored by Keysight Technologies.

According to the company, the use of over-moulded SMT plastic packaging greatly simplifies handling and assembly and reduces unit cost. However, as operating frequencies and RF output power increase, so do the challenges of using SMT packaging.

This webcast describes the design of power amplifiers (PAs) at X-Band using plastic packaged SMT GaN transistors. The design approach is illustrated with a detailed description of the design, layout, EM simulation, fabrication and evaluation of a single stage 5 W X-Band GaN PA.

The amplifier is optimised for the 9.3 to 9.5GHz band, has 11dB small-signal gain and provides more than +37dBm output power at 3dB gain compression, with a corresponding drain efficiency of greater than 55 percent.

The design is based on a commercially available discrete 0.25µm GaN transistor (the TGF2977-SM from Qorvo) mounted on a Rogers 4003 PCB. Fast drain switching circuitry is also included on the same PCB to facilitate pulsed operation, with a turn-on time of just 20ns.

New efficiency record for CIGS perovskite tandem cells
Realising tuneable InGaN laser diodes
SiC patenting strong in Q4 2024, says KnowMade
Say hello to the heterogeneous revolution
Double heterostructure HEMTs for handsets
AlixLabs to collaborate with Linköping University
SiC MOSFETs: Understanding the benefits of plasma nitridation
Wolfspeed reports Q2 results
VueReal secures $40.5m to scale MicroSolid printing
Mitsubishi joins Horizon Europe's FLAGCHIP project
Vishay launches new high voltage SiC diodes
UK team leads diamond-FET breakthrough
GaN adoption at tipping point, says Infineon
BluGlass files tuneable GaN laser patents
QD company Quantum Science expands into new facility
Innoscience files lawsuit against Infineon
Riber revenues up 5% to €41.2m
Forvia Hella to use CoolSiC for next generation charging
Photon Design to exhibit QD simulation tool
Ortel transfers CW laser fabrication to Canada
Luminus adds red and blue multi-mode Lasers
PseudolithIC raises $6M for heterogeneous chiplet tech
Mesa sidewall design improves HV DUV LEDs
IQE revenue to exceed expectations
'Game-changing' VCSEL system targets clinical imaging
German start-up secures finance for SiC processing tech
Macom signs preliminaries for CHIPS Act funding
IQE and Quintessent partner on QD lasers for AI
EU funds perovskite tandems for fuel-free space propulsion
EU to invest €3m in GeSi quantum project
Transforming the current density of AlN Schottky barrier diodes
Turbocharging the GaN MOSFET with a HfO₂ gate
×
Search the news archive

To close this popup you can press escape or click the close icon.
Logo
x
Logo
×
Register - Step 1

You may choose to subscribe to the Compound Semiconductor Magazine, the Compound Semiconductor Newsletter, or both. You may also request additional information if required, before submitting your application.


Please subscribe me to:

 

You chose the industry type of "Other"

Please enter the industry that you work in:
Please enter the industry that you work in: