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Ampleon introduces GaN RF power transistors in 10 to 200 W ratings

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Ampleon broaden portfolio with heavy GaN investment

Ampleon has announced expansion of its GaN RF power transistors based on a 0.5um HEMT process technology. Comprising 10 W, 30 W, 50 W and 100 W devices, over ten transistors are currently available suitable for multiple applications such as drivers up to C band, through to 100 W and 200 W push-pull packages for use in final stages up to S band. Housed in a compact and thermally stable ceramic package, the whole CLF1G family of devices are designed for use in a broad range of applications that need to meet specific requirements of SWaP (size, weight and power).

Said Senior Director of Marketing, Ampleon Multi Market Business Unit, Thijs Tullemans:  "We are investing heavily in both LDMOS and GaN technology, as we see GaN gaining momentum beyond the A&D market, into areas such as cellular infrastructure.  Indeed we see significant growth opportunities in both market segments, but with respect to GaN, the technology offers us the opportunity to broaden our product offering to our customers, and we will be releasing more in-depth news on the GaN front in the coming months."

Optimized for best in class linearity, power efficiency, and broadband power performance, Ampleon's GaN devices are available with electrical models, reference designs and demonstration boards. Typical applications include use in commercial aviation and radar applications, aerospace and defence systems, and broadband solutions.

Devices available include the CLF1G0035S-50, a broadband 50 W amplifier capable of operation from DC through to 3.5 GHz that is designed for operation up to 50 V and having excellent VSWR (ruggedness) capabilities of 10:1. 100 W devices have just been released, and Ampleon are currently sampling other types for mass production during early 2016.


 


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