AIX G5+ C integrates Imec's proprietary materials technology to increase performance of GaN-on-Si-based power devices

Deposition equipment company Aixtron has announced that its G5+ C multi-wafer batch MOCVD platform has been qualified for the manufacturing of specific buffer layers as a result of the collaboration on high-voltage GaN power device technology with Belgian nanoelectronics research center Imec (Interuniversity Microelectronics Centre).

Most recently, both Aixtron and Imec received the prestigious 2016 CS Industry Award in the categories of 'High Volume Manufacturing' for Aixtron's G5+ C and 'Substrates and Materials' for Imec's GaN-on-Si materials development. 

In combining their expertise, Aixtron has joined Imec's industrial affiliation program for high power GaN-on-Si device technology. Within the framework of this program, Aixtron's 5x200 mm G5+ MOCVD platform was qualified to integrate Imec's proprietary high-voltage dispersion free buffer technology to the 5x200 mm G5+ MOCVD platform. 

Frank Wischmeyer, vice president marketing and business development power electronics at Aixtron, comments: "We are delighted to announce the successful qualification of Imec's proprietary 200mm GaN-on-Si materials technology on our G5+ C high-volume manufacturing platform. 

"The accomplishment was mainly based on the rapid implementation of the portfolio of qualified layer processes by the epitaxy teams of Imec and Aixtron building up the complex epitaxial material stack targeting high voltage switching applications."

"Imec targets high-performing and reliable GaN power devices requiring a concerted effort between device and material engineering", says Rudi Cartuyvels, senior vice president Smart Systems and Energy Technologies at Imec. "As the AIX G5+ C enables exactly this, we are pleased with the fast transfer of our device structure processes onto the new platform. We are happy that Aixtron is part of Imec's GaN industrial affiliation program and look forward to a continuation of the successful collaboration".

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